By Rajesh Garg
This publication is encouraged by way of the demanding situations confronted in designing trustworthy integratedsystems utilizing glossy VLSI tactics. The trustworthy operation of built-in Circuits (ICs) has develop into more and more tough to accomplish within the deep sub-micron (DSM) period. With continually lowering machine function sizes, mixed with decrease offer voltages and better working frequencies, the noise immunity of VLSI circuits is lowering alarmingly. hence, VLSI circuits have gotten extra susceptible to noise results resembling crosstalk, strength offer diversifications and radiation-induced delicate errors.
This e-book describes the layout of resilient VLSI circuits. It provides algorithms to investigate the hazardous results of radiation particle moves and processing diversifications at the electric habit of VLSI circuits, in addition to circuit layout options to mitigate the impression of those problems.
- Describes the cutting-edge within the components of radiation tolerant circuit layout and approach version tolerant circuit design;
- Presents analytical methods to check successfully the severity of electric results of radiation/process adaptations, in addition to concepts to lessen the consequences as a result of those problems;
- Distills content material orientated towards nuclear engineers into modern algorithms and methods that may be understood simply and utilized by means of VLSI designers.
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Additional info for Analysis and Design of Resilient VLSI Circuits: Mitigating Soft Errors and Process Variations
155–166, Jan. 2006. 13. D. Binder, C. Smith, and A. Holman, “Satellite anomalities from galactic cosmic rays,” IEEE Transactions on Nuclear Science, vol. NS-22, pp. 2675–2680, Dec. 1975. 14. R. G. Harrison and D. B. Stephenson, “Detection of a galactic cosmis ray influence on clouds,” Geophysical Research Abstracts, vol. 8, no. 07661, pp. 1, 2006. 15. G. Cellere, A. Paccagnella, A. Visconti, and M. Bonanomi, “Soft errors induced by single heavy ions in floating gate memory arrays,” in Proc. of the Intl.
In fact, when a radiation particle strikes the output node of INV1, there are four cases to consider. In the next section, each of these cases (distinguished based on the VGM value) are described. Based on this classification, the proposed analytical closed form expression for the pulse width of the radiation-induced voltage glitch is derived in Sect. 4. 2 Classification of Radiation Particle Strikes The analysis presented in this chapter is for an inverter with its input at VDD and its output at GND.
In this case as well, M1 starts out in the linearN . region, and enters the saturation region when the node voltage at a rises above Vdsat However, in this case, the PMOS transistor M2 of INV1 also turns on (in saturation mode) when the voltage of node a reaches VDD C jVTP j (here VTP is the threshold voltage of the PMOS transistor) because the VGS of M2 becomes smaller than VTP . 6 V). 6 V for Silicon. 6 V. On the basis of the above discussion, note that M1 and M2 operate in different modes of operation (cut-off, linearand saturation) during the radiation-induced transient.